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| NTE3088 Optoisolator Silicon NPN High Voltage Phototransistor Output Description: The NTE3088 is a gallium arsenide LED optically coupled to a high voltge, silicon phototransistor in a 6-Lead DIP type package designed for applications requiring high voltage output. This device is particularly useful in copy machines and solid state relays. Features: D High Voltage: 300V D High Isolation Voltage: VISO = 7500V (Peak) Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Input LED Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak Forward Current (Pulse Width = 1s, 330pps), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A LED Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/C Output Transistor Collector-Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Detector Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/C Total Device Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . . 7500V Total Device Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering for 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Note 1. Isolation surge voltage is an internal device dielectric breakdown rating. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Input LED Reverse Leakage Current Forward Voltage Capacitance IR VF C VR = 6V IF = 10mA VR = 0, f = 1MHz VCE = 200V, RBE = 1M VCE = 200V, RBE = 1M, TA = +100C Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Coupled Current Transfer Ratio Isolation Surge Voltage Isolation Resistance Collector-Emitter Saturation Voltage Isolation Capacitance Switching Turn-On Time Turn-Off Time ton toff VCC = 10V, IF = 5mA, RL = 100 - - 5 5 - - s s CTR VISO RISO VCE(sat) CISO VCE = 10V, IF = 10mA, RBE = 1M 60Hz Peak AC, 1sec, Note 2 V = 500V, Note 2 IC = 0.5mA, IF = 10mA, RBE = 1M V = 0, f = 1MHz, Note 2 20 7500 - - - - - 1011 - 0.2 - - - 0.4 - % V V(BR)CBO IC = 100A V(BR)CER IC = 1mA, RBE = 1M V(BR)EBO IE = 100A - - - - 1.2 18 10 1.5 - A V pF Symbol Test Conditions Min Typ Max Unit Photodarlington (IF = 0 unless otherwise specified) Collector-Emitter Dark Current ICER - - - - 5 - - - - - 100 250 300 300 - nA A V V V V pF Note 2. For this test LED Pin1 and Pin2 are common and phototransistor Pin4, Pin5, and Pin6 are common. 6 1 Pin Connection Diagram Anode Cathode N.C. 1 2 3 6 Base 5 Collector 4 Emitter .200 (5.08) Max .070 (1.78) Max 5 2 4 3 .260 (6.6) Max .350 (8.89) Max .300 (7.62) .350 (8.89) Max .085 (2.16) Max .100 (2.54) |
Price & Availability of NTE3088
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